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 PH1214-0.85L
Radar Pulsed Power Transistor 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
Features
* * * * * * * * * NPN silicon microwave power transistors Common emitter configuration Broadband Class A operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant
M/A-COM Products Released, 30 May 07
Outline Drawing
Absolute Maximum Ratings at 25C
Parameter
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25C Storage Temperature Junction Temperature
Symbol
VCES VCEO VEBO IC PTOT TSTG TJ
Rating
27 20 3.5 0.71 9.2 -65 to +200 200
Units
V V V A W C C
Electrical Specifications: TC = 25 5C (Room Ambient )
Parameter Test Conditions Frequency Symbol
BVCES BVCEO ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP
Min
27 20 0.85 9.3 30 -
Max
1.0 19.0 -9 2:1 1.5:1
Units
V V mA C/W W dB % dB -
Collector-Emitter Breakdown Voltage IC = 4mA Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability VCE = 15V Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W Vcc = 11.5V, Pin = 0.1W
C
RL VSWR-T VSWR-S
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
PH1214-0.85L
Radar Pulsed Power Transistor 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
RF Test Fixture Impedance
F (GHz)
1.2 1.3 1.4
M/A-COM Products Released, 30 May 07
ZIF ()
5.9 - j4.5 6.4 - j4.0 7.1 - j4.4
ZOF ()
7.4 + j6.3 7.5 + j7.7 7.4 + j8.9
Test Fixture Circuit Dimensions
Test Fixture Assembly
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.


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